Systematic investigations on the small signal as well as power performance as functions of the drain biases are presented. Such feedback capacitors may impact the overall RF performance of the device especially at high frequencies.
While the field plate structure helps to increase the breakdown voltage of the device through modulating the electric field locally, it induces additional feedback capacitance from drain to gate. This paper examines the effect of the field plate structure on the RF performance of AlGaN/GaN High Electron Mobility Transistor (HEMT) devices.
Available online at SciVerse ScienceDirectĢ012 International Conference on Solid State Devices and Materials ScienceĮffect of Field Plate on the RF Performance of AlGaN/GaNĬhe-Yang Chianga, Heng-Tung Hsua*, and Edward Yi ChangbĪ Department of Communications Engineering, Yuan Ze University, ChungLi, Taiwan, 32003 bDepartment of Material Science, National Chiao Tung University, Hsinchu, Taiwan, 30010
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